Sökning: "III-V semiconductors"

Visar resultat 6 - 10 av 59 avhandlingar innehållade orden III-V semiconductors.

1. 6. III-V MOSFETs for High-Frequency and Digital Applications

   Författare :Cezar Zota; Nanoelektronik; []
   Nyckelord :III-V; MOSFET; Transistor;

   Sammanfattning : III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. LÄS MER

3. 7. Optical Studies of InAs Quantum Dots in III-V Semiconductors

   Författare :Lars Landin; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum dots; III-V semiconductors; k.p calculations; photoluminescence; deep-level transient spectroscopy; photoconductivity; few particle effect; single dot spectroscopy; InAs InP; Semiconductory physics; Halvledarfysik; Fysicumarkivet A:2000:Landin; InAs GaAs;

   Sammanfattning : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. LÄS MER

4. 8. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

   Författare :Anton E. O. Persson; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

   Sammanfattning : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. LÄS MER

5. 9. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

   Författare :Bernhard Kowalski; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

   Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER

7. 10. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

   Författare :Dan Hessman; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

   Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER