Sökning: "III-V semiconductors"

Visar resultat 11 - 15 av 59 avhandlingar innehållade orden III-V semiconductors.

1. 11. Ensemble and Individual III-V Semiconductor Nanopillars: Optical Properties and Applications

   Författare :Reza Sanatinia; Anand Srinivasan; Andrea Fiore; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanopillar; nanowires; nanophotonics; nanofabrication; III-V semiconductors; photovoltaics; second-harmonic generation; top-down approach; colloidal lithography; antireflection; modal dispersion; polarization; nanowaveguide; indium phosphide; gallium arsenide; gallium phosphide; Physics; Fysik;

   Sammanfattning : Optical properties of semiconductor nanowires (NWs)/nanopillars (NPs), as individual or ensemble, have attracted significant research interest in recent years. Their potential applications range from solid-state lighting, photovoltaics, lasing and nonlinear optics to sensing and life sciences. LÄS MER

3. 12. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective

   Författare :Gautham Rangasamy; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-Power Electronics; Self-Heating; Steep Slope Devices; Tunnel Field-Effect Transistors; Vertical Nanowire; III-V Semiconductors;

   Sammanfattning : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. LÄS MER

4. 13. Surfaces and interfaces of low dimensional III-V semiconductor devices

   Författare :Yen-Po Liu; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductor; nanowires; nanosheet; nano-device fabrication; STM; AFM; SGM; OBIC; XPS; Fysicumarkivet A:2022:Liu;

   Sammanfattning : The demand for fast and energy efficient (opto-)electronic applications needs high mobility semiconductor materials, such as InAs with a very high electron mobility and GaSb with a very high hole mobility. Beyond the material itself, also an innovative device geometry is needed, for example, the gate-all-around geometry that provides higher efficiency and electrostatic control for computational units. LÄS MER

5. 14. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

   Författare :Andrea Troian; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

   Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER

7. 15. Metall organic vapour phase epitaxy for advanced III-V devices

   Författare :Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. LÄS MER