Sökning: "GaN"

Visar resultat 21 - 25 av 155 avhandlingar innehållade ordet GaN.

  1. 21. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Författare :Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Sammanfattning : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). LÄS MER

  3. 22. Advanced III-Nitride Technology for mm-Wave Applications

    Författare :Anna Malmros; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

    Sammanfattning : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. LÄS MER

  4. 23. Nonlinear Modeling of FETs for Microwave Switches and Amplifiers

    Författare :Ankur Prasad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HEMT; symmetry; small-signal model; field-plate.; GaAs; GaN; nonlinear model; trap model; symmetrical model; trap; model;

    Sammanfattning : The exponential growth in wireless systems require rapid prototyping of radio frequency circuits (RF) using computer-aided design (CAD) enabled models. Most of the RF circuits (e.g. switches, amplifiers, mixers, etc. LÄS MER

  5. 24. Ultraviolet vertical-cavity surface-emitting lasers and vertical microcavities for blue lasers

    Författare :Filip Hjort; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; ultraviolet; microcavity; electrical conductivity; vertical-cavity surface-emitting laser; AlGaN; electrochemical etching; nanostructures; distributed Bragg reflector;

    Sammanfattning : III-nitride materials are used for ultraviolet (UV) and visible light emitters. One such light source is the vertical-cavity surface-emitting laser (VCSEL) that could find applications within areas ranging from sterilization and medical treatment to car headlights and augmented reality displays. LÄS MER

  7. 25. Efficient and Wideband Load Modulated Power Amplifiers for Wireless Communication

    Författare :Han Zhou; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; energy efficiency; load modulation; Combiner synthesis; RF; wideband; Doherty; power amplifier; CLMA; SCLMA; microwave;

    Sammanfattning : The increasing demand for mobile data traffic has resulted in new challenges and requirements for the development of the wireless communication infrastructure. With the transition to higher frequencies and multi-antenna systems, radio frequency (RF) hardware performance, especially the power amplifier (PA), becomes increasingly important. LÄS MER