Sökning: "GaN"
Visar resultat 16 - 20 av 155 avhandlingar innehållade ordet GaN.
16. Buffer Related Dispersive Effects in Microwave GaN HEMTs
Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER
17. Silicon δ-doping and Isoelectronic Doping in GaAs ans GaN Layers Grown by MBE
Sammanfattning : This work concerns MBE-grown material, particularly physical effects due to controlled impurities of Si and N in arsenides, and the growth of nitrides and studies of Al- and As-impurities in them. Apart from interesting physical phenomena there are important device applications. The first part is devoted to studies of Si .delta. LÄS MER
18. Optimum GaN HEMT Oscillator Design Targeting Low Phase Noise
Sammanfattning : The thesis considers design of low phase noise oscillators, given the boundary condition of the used technology. Important conditions are the power handling of the active device, device noise floor, the quality factor of the resonator, bias settings, and low frequency noise. LÄS MER
19. Characterization and Compensation of Thermal Effects in GaN HEMT Technologies
Sammanfattning : Further advancements with GaN based technologies relies on the ability to handle the heat flux, which consequently arises from the high power density. Advanced cooling techniques and thermal optimization of the technology are therefore prioritized research areas. LÄS MER
20. Magnetron Sputter Epitaxy of GaN
Sammanfattning : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. LÄS MER