Sökning: "GaN"

Visar resultat 11 - 15 av 155 avhandlingar innehållade ordet GaN.

1. 11. CVD solutions for new directions in SiC and GaN epitaxy

   Författare :Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CVD; SiC; GaN; epitaxy;

   Sammanfattning : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. LÄS MER

3. 12. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

   Författare :Anna Malmros; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; TFR; TiN; HEMT; GaN; TaN;

   Sammanfattning : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. LÄS MER

4. 13. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

   Författare :Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

   Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER

5. 14. Nonlinear Characterization of Wideband Microwave Devices and Dispersive Effects in GaN HEMTs

   Författare :Sebastian Gustafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; dispersive effects; electron trapping; thermal coupling; HEMT; GaN; microwave; wideband;

   Sammanfattning : Measurements play a key role in the development of microwave hardware as they allow engineers to test and verify the RF performance on a system, circuit, and component level. Since modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand of higher datarates, nonlinear characterization using wideband stimuli is becoming increasingly important. LÄS MER

7. 15. Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy

   Författare :David Adolph; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Oxides; GaN; distributed Bragg reflector; MBE; molecular beam epitaxy; ZnO; Nitrides; DBR;

   Sammanfattning : This thesis describes epitaxial growth of ZnO/GaN distributed Bragg reflectors by hybrid plasma-assisted molecular beam epitaxy on GaN(0001). The unique hybrid approach employed the same growth chamber for continuous growth of both ZnO and GaN without exposing the layers to the ambient conditions. LÄS MER