Sökning: "InAlN"

Visar resultat 1 - 5 av 10 avhandlingar innehållade ordet InAlN.

1. 1. Advanced III-Nitride Technology for mm-Wave Applications

   Författare :Anna Malmros; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

   Sammanfattning : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. LÄS MER

3. 2. Structural and elastic properties of InN and InAlN with different surface orientations and doping

   Författare :Mengyao Xie; Vanya Darakchieva; Jens Birch; Enrique Calleja; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : Group–III nitrides, InN, GaN, AlN, and their alloys, have revolutionized solid state lighting and continue to attract substantial research interest due to their unique properties and importance for optoelectronics and electronics. Among the group–III nitrides, InN has the lowest effective electron mass and the highest electron mobility, which makes it suitable for high–frequency and high power devices. LÄS MER

4. 3. Study of GaN Based Nanostructures and Hybrids

   Författare :Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Kevin P. O'Donnell; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Sputtering; Forster; Semiconductor; Nitride; GaN; Hybrid; Nanorods; Nanostructure; Thin film; Förstoffning; Sputtring; Förster; Halvledare; Nitrid; GaN; Hybrider; Nanostavar; Nanostrukturer; tunnfilmer;

   Sammanfattning : GaN and its alloys with Al and In belong to the group III nitride semiconductors and are today the materials of choice for efficient white light emitting diodes (LEDs) enabling energy saving solid state lighting. Currently, there is a great interest in the development of novel inexpensive techniques to fabricate hybrid LEDs combining high quality III-N quantum well (QW) structures with inexpensive colloidal nanoparticles or conjugated polymers. LÄS MER

5. 4. MOCVD growth of GaN-based high electron mobility transistor structures

   Författare :Jr-Tai Chen; Erik Janzén; Urban Forsberg; James S. Speck; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. LÄS MER

7. 5. Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods

   Författare :Alexandra Serban; Jens Birch; Ching-Lien Hsiao; Per Ola Åke Persson; Lars Hultman; Kimberly Thelander; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. LÄS MER