Sökning: "field-plate."

Hittade 3 avhandlingar innehållade ordet field-plate..

  1. 1. Characterization of interface states & radiation damage effects in duo-lateral PSDs : Using SEM microscopy and UV beam profiling techniques

    Författare :Omeime Xerviar Esebamen; Göran Thungström; Hans-Erik Nilsson; Mittuniversitetet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : There has been an increase in the use of duo‐lateral position sensitive detectors inpractically every radiation and beam detection application. These devices unlike other light detection system utilize the effect of the lateral division of the generated photocurrent to measure the position of the integral focus of an incoming lightsignal. LÄS MER

  3. 2. Vertical III-V Nanowire MOSFETs

    Författare :Olli-Pekka Kilpi; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; III-V; InGaAs; Vertical; Heterostructure; High frequency;

    Sammanfattning : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. LÄS MER

  4. 3. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Författare :Vincent Desmaris; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER