Sökning: "metal oxide semiconductor field effect transistor MOSFET"
Visar resultat 16 - 20 av 29 avhandlingar innehållade orden metal oxide semiconductor field effect transistor MOSFET.
16. InGaAs Nanowire and Quantum Well Devices
Sammanfattning : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. LÄS MER
17. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER
18. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER
19. Zinc Oxide Nanostructure Based Electrochemical Sensors and Drug Delivery to Intracellular Environments
Sammanfattning : The nanoscale science and nanostructure engineering have well established in the fabrication of novel electrochemical biosensors with faster response and higher sensitivity than of planar sensor configurations. Moreover nanostructures are suggested and used as efficient carrier of photosensitizers for cancerous cell treatment. LÄS MER
20. Vertical Nanowire High-Frequency Transistors
Sammanfattning : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. LÄS MER
