Sökning: "FinFET"

Hittade 4 avhandlingar innehållade ordet FinFET.

  1. 1. Integration of metallic source/drain contacts in MOSFET technology

    Författare :Jun Luo; Mikael Östling; Shi-Li Zhang; Anthony O'Neill; KTH; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; Semiconductor physics; Halvledarfysik;

    Sammanfattning : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. LÄS MER

  2. 2. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  3. 3. Integrated Variable-Gain and CMOS Millimeter-Wave Amplifiers

    Författare :Mohammad Anowar Masud; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; LNA; MMIC; FinFET; CMOS; HEMT; GaAs; WLP; VGA; BCB;

    Sammanfattning : Variable Gain Amplifier finds extensive use in the high frequency demonstrators specially those operating in the millimeter-wave regions and beyond where the incoming RF signal level can have wide variations. To maintain a constant signal level an IF VGA has been designed that can offer a dynamic variation of gain as much as 45 dB together with a high maximum gain and a low noise figure. LÄS MER

  4. 4. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

    Författare :Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

    Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER