Sökning: "metal oxide semiconductor field effect transistor MOSFET"
Visar resultat 6 - 10 av 29 avhandlingar innehållade orden metal oxide semiconductor field effect transistor MOSFET.
6. On Reliability of SiC Power Devices in Power Electronics
Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER
7. Nanowire Transistors and RF Circuits for Low-Power Applications
Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER
8. Design and Fabrication of Silicon Carbide RF MOSFET
Sammanfattning : .... LÄS MER
9. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics
Sammanfattning : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. LÄS MER
10. Silicon-Carbide-Based High-Voltage Submodules for HVDC Voltage-Source Converters
Sammanfattning : In order to transition to renewable energy sources and simultaneously meet the increasing demand for electrical energy, highly flexible and efficient grids are required. High-voltage direct-current (HVDC) transmission and grids are foreseen to be a vital part of the future electricity grid. LÄS MER