Sökning: "pMOS"

Visar resultat 1 - 5 av 8 avhandlingar innehållade ordet pMOS.

  1. 1. Source and drain engineering in SiGe-based pMOS transistors

    Författare :Christian Isheden; Mikael Östling; Simon Deleonibus; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; Electronics; Elektronik;

    Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER

  2. 2. Vertical III-V Nanowire Transistors for Low-Power Electronics

    Författare :Abinaya Krishnaraja; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metal-oxide-semiconductor field-effect transistor MOSFET ; Steep slope; Tunnel Field-Effect Transistors; Vertical nanowire; III-V materials; semiconducting III-V; InAs; GaSb; InGaAsSb; PMOS; Transistor; Electronics;

    Sammanfattning : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. LÄS MER

  3. 3. Source/drain engineering in advanced pMOS transistors

    Författare :Christian Isheden; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; Elektronik;

    Sammanfattning : .... LÄS MER

  4. 4. SiC CMOS and memory devices for high-temperature integrated circuits

    Författare :Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER

  5. 5. Different faces of civil society

    Författare :Filip Wijkström; Handelshögskolan i Stockholm; []
    Nyckelord :SAMHÄLLSVETENSKAP; SOCIAL SCIENCES;

    Sammanfattning : This is volume II in a dissertation in two parts. In addition to the papers found in this volume, the major publication is a book: The nonprofit sector in Sweden (Manchester University Press, Manchester, 1997, written together with Tommy Lundström). LÄS MER