Sökning: "Complementary metal oxide semiconductor CMOS"

Visar resultat 6 - 10 av 32 avhandlingar innehållade orden Complementary metal oxide semiconductor CMOS.

1. 6. High-Speed Analog-to-Digital Converters in CMOS

   Författare :Siyu Tan; Integrerade elektroniksystem; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; A D converters; CMOS circuit design; ΔΣ ADC; high-speed ADC; Nyquist-rate ADC; oversampled ADC; SAR ADC; 5G;

   Sammanfattning : The Analog to Digital (A/D) Converters (ADC) are vital components in high-performance radio devices. In the receiver end, the signal received by the analog front-end can not be directly analyzed by the digital core, thus requiring high-performance ADC circuits acting as bridges connecting the analog and digital domain. LÄS MER

3. 7. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

   Författare :Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

   Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER

4. 8. Surfaces and interfaces of low dimensional III-V semiconductor devices

   Författare :Yen-Po Liu; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductor; nanowires; nanosheet; nano-device fabrication; STM; AFM; SGM; OBIC; XPS; Fysicumarkivet A:2022:Liu;

   Sammanfattning : The demand for fast and energy efficient (opto-)electronic applications needs high mobility semiconductor materials, such as InAs with a very high electron mobility and GaSb with a very high hole mobility. Beyond the material itself, also an innovative device geometry is needed, for example, the gate-all-around geometry that provides higher efficiency and electrostatic control for computational units. LÄS MER

5. 9. Heterogeneous 3D Integration and Packaging Technologies for Nano-Electromechanical Systems

   Författare :Simon J. Bleiker; Frank Niklaus; Gary K. Fedder; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nano-electromechanical systems NEMS ; Micro-electromechanical systems MEMS ; heterogeneous 3D integration; CMOS integration; Morethan- Moore MtM ; adhesive wafer bonding; NEM switch; FPGA; contact reliability; hermetic vacuum packaging; Cu low-temperature welding; through silicon vias TSVs ; magnetic self-assembly;

   Sammanfattning : Three-dimensional (3D) integration of micro- and nano-electromechanical systems (MEMS/NEMS) with integrated circuits (ICs) is an emerging technology that offers great advantages over conventional state-of-the-art microelectronics. MEMS and NEMS are most commonly employed as sensor and actuator components that enable a vast array of functionalities typically not attainable by conventional ICs. LÄS MER

7. 10. Direct RF sampling receivers for wireless systems in CMOS technology

   Författare :Darius Jakonis; Linköpings universitet; []
   Nyckelord :TECHNOLOGY; TEKNIKVETENSKAP;

   Sammanfattning : The fast development of wireless communication systems asks for more flexible and more cost-effective radio architectures. A long term goal is a software defined radio, where communication standards are chosen by reconfiguration of hardware. LÄS MER