Sökning: "buried channel"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden buried channel.

  1. 1. Novel concepts for advanced CMOS : Materials, process and device architecture

    Författare :Dongping Wu; KTH; []
    Nyckelord :CMOS technology; MOSFET; high-k; gate dielectric; ALD; surface pre-treatment; metal gate; poly-SiGe; strained SiGe; surface-channel; buried-channel; notched gate;

    Sammanfattning : The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. LÄS MER

  2. 2. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

    Författare :Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

    Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER

  3. 3. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

  4. 4. Conformational changes in Staphylococcus aureus' alpha-toxin : from water-soluble monomer to a transmembrane channel

    Författare :Beatrix Vécsey Semjén; Karolinska Institutet; Karolinska Institutet; []
    Nyckelord :Staphylococcal alpha-toxin membrane-protein interaction pore formingtoxins.;

    Sammanfattning : Alpha-toxin is secreted by Staphylococcus aureus as a soluble monomer that without further activation can oligomerize and form a transmembrane channel. One of the aims of the present work was to understand the underlying mechanisms of the membrane insertion process. LÄS MER

  5. 5. Resonant Tunneling in Laterally Confined Quantum Structures

    Författare :Boel Gustafson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; gravitation; relativity; quantum mechanics; classical mechanics; Mathematical and general theoretical physics; Fysik; Physics; High peak-to-valley ratio; Lateral confinement; Quantum dots; Resonant tunneling; Self-assembled quantum dots; Schottky depletion; Buried metal gate; Electron transport; Magnetic-field dependence; Energy level width; Tunneling transistors; Mode coupling; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; statistisk fysik; termodynamik; Technological sciences; Teknik; Fysicumarkivet A:2001:Gustafson;

    Sammanfattning : In the thesis, three-dimensionally confined resonant tunneling structures were studied experimentally. Two approaches were used for obtaining quantum confinement: gate-defined lateral constriction of double barrier structures, and epitaxial growth of self-assembled quantum dots. LÄS MER