Sökning: "wide-bandgap semiconductor"

Visar resultat 21 - 25 av 44 avhandlingar innehållade orden wide-bandgap semiconductor.

1. 21. Towards ultrafast imaging with extreme ultraviolet light sources

   Författare :Jörg Schwenke; Lunds universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Photo emission electron microscopy; Focusing of X-ray radiation; Digital holography; High-order harmonic generation; Free-electron laser seeding; Secondary electron cascades; Fysicumarkivet A:2012:Schwenke;

   Sammanfattning : This thesis reports experimental studies performed with two advanced coherent XUV sources with ultrashort pulse duration, high-order harmonic generation and seeded-free electron laser. High-order harmonic generation (HHG) is the generation of overtones of a fundamental laser pulse in a medium, e.g. noble gases. LÄS MER

3. 22. Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs

   Författare :Carl-Mikael Zetterling; KTH; []
   Nyckelord :;

   Sammanfattning : Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelectronic devices. LÄS MER

4. 23. Process Design Kit and High-Temperature Digital ASICs in Silicon Carbide

   Författare :Muhammad Shakir; Carl-Mikael Zetterling; B. Gunnar Malm; Philip Mawby; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; high-temperature digital integrated circuits; process design kit PDK ; bipolar logic gates; transistor-transistor logic TTL ; TTL CPU; bipolar transistor; LSI Circuits; ASICs; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Electronics such as microprocessors are highly demanded to monitor or control a process or operation in temperature critical (300 ºC to 600 °C) applications. State-of-the-art silicon-based integrated circuits (ICs) have been improved significantly throughout the years but mainly for a low-temperature ambient. LÄS MER

5. 24. Towards Novel AlGaN-Based Light Emitters

   Författare :Martin Stattin; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN; light emitting diode; deep ultraviolet; III-Nitrides; near infrared; quantum cascade laser;

   Sammanfattning : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. LÄS MER

7. 25. Impact of Ionizing Radiation on 4H-SiC Devices

   Författare :Muhammad Usman; Anders Hallén; Einar Örn Sveinbjörnsson; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

   Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER