Sökning: "high-k dielectrics"
Visar resultat 1 - 5 av 11 avhandlingar innehållade orden high-k dielectrics.
1. Ge/high-k Gates for Monolithic 3D Integration
Sammanfattning : Continuous scaling of transistor dimensions has been in the heart of semiconductorindustry for many years. Recently the scaling has been enabled by various performance boosters which resulted in increased processing complexity and cost, forcing the chip manufacturers to look for some alternative solutions. LÄS MER
2. Electron states in high-k dielectric/silicon structures
Sammanfattning : .... LÄS MER
3. Low-frequency noise in high-k gate stacks with interfacial layer engineering
Sammanfattning : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. LÄS MER
4. Silicon device substrate and channel characteristics influenced by interface properties
Sammanfattning : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. LÄS MER
5. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors
Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER