Sökning: "deep ultraviolet"

Visar resultat 1 - 5 av 25 avhandlingar innehållade orden deep ultraviolet.

  1. 1. Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes

    Författare :Andrea Pinos; Saulius Marcinkevicius; Andreas Hangleiter; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; AIGaN; deep-UV LEDs; polarization fields; screening; exciton binding energy; alloy fluctuations; near-field microscopy; carrier dynamics; LED aging; Optics; Optik;

    Sammanfattning : .... LÄS MER

  3. 2. Elements of AlGaN-Based Light Emitters

    Författare :Martin Stattin; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; vertical cavity surface emitting laser; deep-ultraviolet; III-nitride; near-infrared; light emitting diode; visible; AlGaN; quantum cascade laser;

    Sammanfattning : The III-nitrides have enabled a range of optoelectronic devices and associated applications of great industrial and societal importance. However, the full potential of the III-nitrides remains to be explored. LÄS MER

  4. 3. Towards Novel AlGaN-Based Light Emitters

    Författare :Martin Stattin; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN; light emitting diode; deep ultraviolet; III-Nitrides; near infrared; quantum cascade laser;

    Sammanfattning : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. LÄS MER

  5. 4. Investigation of deep levels in bulk GaN

    Författare :Tran Thien Duc; Erik Janzén; Franziska C. Beyer; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. LÄS MER

  7. 5. Concepts for compact solid-state lasers in the visible and UV

    Författare :Sandra Johansson; Fredrik Laurell; Patrick Georges; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; nonlinear optics; frequency conversion; visible lasers; ultraviolet lasers; KTiOPO4; BiBO; BBO; quasi phase-matching; birefringent phase-matching; solid-state lasers; Physics; Fysik;

    Sammanfattning : In many fields, scientific or industrial, optical devices that can be tailored in terms of spectral qualities and output power depending on the application in question are attractive. Nonlinear optics in combination with powerful laser sources provide a tool to achieve essentially any wavelength in the electromagnetic spectrum, and the advancement of material technology during the last decade has opened up new possibilities in terms of realising such devices. LÄS MER