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Visar resultat 1 - 5 av 44 avhandlingar som matchar ovanstående sökkriterier.

1. 1. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

   Författare :Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

   Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER

3. 2. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

   Författare :Sadia Muniza Faraz; Qamar ul Wahab; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. LÄS MER

4. 3. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

   Författare :Juan Colmenares; Hans-Peter Nee; Leon M. Tolbert; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. LÄS MER

5. 4. Microwave power device characterization

   Författare :Kristoffer Andersson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; statistical estimation; self-heating; Silicon Carbide; Gallium Nitride; mixer; thermal resistance; wide bandgap; microwave; error-correction; small-signalmodel;

   Sammanfattning : The first part of the thesis covers work done on device characterizationmethods. A statistical method for estimating small-signal model parametersin FET-models was proposed. A maximum likelihood estimator wasderived and the new method was compared to a standard direct extractiontechnique. LÄS MER

7. 5. Electronic Properties of Diamond

   Författare :Markus Gabrysch; Jan Isberg; Mats Leijon; Johan Hammersberg; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; CVD diamond; wide-bandgap semiconductor; time-of-flight; pair-creation energy; electronic devices; detector; Elektronik; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Electricity; Esp The Study Of Transients and Discharges; elektricitetslära; ssk studiet av transienter och urladdning;

   Sammanfattning : Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties compared to other (wide bandgap) semiconductors make it desirable to develop single-crystalline epitaxial diamond films for many electronic device and detector applications. LÄS MER