Sökning: "bipolar junction transistors"
Visar resultat 1 - 5 av 33 avhandlingar innehållade orden bipolar junction transistors.
1. High power bipolar junction transistors in silicon carbide
Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER
2. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors
Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER
3. Characterisation of bipolar transistors : parameter extraction and degradation dynamics
Sammanfattning : .... LÄS MER
4. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors
Sammanfattning : .... LÄS MER
5. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
Sammanfattning : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. LÄS MER