Sökning: "p-i-n photodiodes"

Hittade 3 avhandlingar innehållade orden p-i-n photodiodes.

  1. 1. High-Speed Electroabsorption Modulators and p-i-n Photodiodes

    Författare :Robert Lewén; KTH; []
    Nyckelord :Optical communication; Fiber optic; Electroabsorption modulators; p-i-n photodiodes; transmission line; traveling wave; high-speed; microwave photonics;

    Sammanfattning : This thesis presents methods for optimization ofelectroabsorption modulators (EAM) and p-i-n photodiodes (PD)withrespect to high frequency (HF) performance. Differentreactive matching techniques are investigated such as lumpedmatching and integrated transmission line (TML) layouts includingoperation in the traveling-wave (TW) regime. LÄS MER

  3. 2. Silicon Carbide High Temperature Photodetectors and Image Sensor

    Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER

  4. 3. Near-infrared photodetectors based on Si/SiGe nanostructures

    Författare :Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER