Sökning: "oxidation of SiC"
Visar resultat 1 - 5 av 19 avhandlingar innehållade orden oxidation of SiC.
Sammanfattning : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. LÄS MER
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Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER
Sammanfattning : In this doctoral project, a relatively new form of carbon material, with unique narrow pore size distribution around 7 Å and with uniform structure, has been electrochemically characterised using the single particle microelectrode technique. The carbon has been used as electrode material for supercapacitors. LÄS MER
Sammanfattning : The fullerene molecule C60 is known to undergo many different chemical reactions, including intercalation of alkali- and alkaline earth metals. Relatively little is still known about the reaction between transition metals and C60, and the objective of this thesis was therefore-to investigate the chemical interaction between C60 and some group IV-VI transition metals. LÄS MER