Sökning: "oxidation of SiC"
Visar resultat 1 - 5 av 23 avhandlingar innehållade orden oxidation of SiC.
1. Electrical properties of thermal oxides on SiC manufactured in an alumina furnace
Sammanfattning : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. LÄS MER
2. Charge carrier dynamics at the SiO2/SiC interface
Sammanfattning : .... LÄS MER
3. Studies of Surface and Interface Properties of 4H-SiC/Si02
Sammanfattning : The thesis work is focused on photoemission studies of clean and oxidized 4H-SiC surfaces since 4H-SiC has been considered the most promising for device applications. Oxide layers can be easily grown by standard wet and dry oxidation methods but to obtain good interface properties (i.e. LÄS MER
4. Detection and removal of traps at the SiO2/SiC interface
Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER
5. Surface modification of inorganic materials with graphene oxide : From solution to high-temperature synthesis
Sammanfattning : The use of graphene as an additive in materials is often challenging due to the agglomeration of the two-dimensional graphene sheets. An alternative additive is graphene oxide (GO), an oxidized form of graphene, which is easily dispersed in water. LÄS MER
