Sökning: "oxidation of SiC"

Visar resultat 16 - 20 av 23 avhandlingar innehållade orden oxidation of SiC.

  1. 16. High-entropy boron-carbide and its composites

    Författare :Hanzhu Zhang; Farid Akhtar; Peizhong Feng; Yong Zhang; Luleå tekniska universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Engineering Materials; Materialteknik;

    Sammanfattning : High-entropy alloy (HEA) is a multicomponent alloy material that contains five or more principal elements in equi- or near equi-atomic ratios. The entropy stabilisation leads to the formation of a crystalline solid solution accommodating the principal elements. LÄS MER

  3. 17. Silicon carbide field-effect devices studied as gas sensors for exhaust gas monitoring

    Författare :Peter Tobias; Ignaz Eisele; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; high temperature; gas sensors; field effect devices; MISdevices; Schottky diodes; experimental design; reaction kinetics; mass transport; car exhaust; multipoint injection; response times; cylinder specific; on-board diagnosis;

    Sammanfattning : Metal-insulator-silicon carbide (MIS) structures have been studied as gas sensors. We have investigated how the sensors detect gases, how fast they do that, and how they could be used for exhaust gas monitoring.We have prepared simple field-effect devices, MIS-capacitors and Schottky diodes, on silicon carbide with platinum gates. LÄS MER

  4. 18. Functional Nanostructures for Gas Sensors

    Författare :Hossein Fashandi; Per Eklund; Hans Högberg; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : This research focuses on three main topics within the aims of FUNMAT, which are:Ohmic contacts to high-temperature chemical gas sensors.Studies of catalytic monolayers on active gate metal in SiC-based gas sensors.Investigating potential sensing properties of the nanoscale material MXene. LÄS MER

  5. 19. Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs

    Författare :Carl-Mikael Zetterling; KTH; []
    Nyckelord :;

    Sammanfattning : Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelectronic devices. LÄS MER

  7. 20. Scanning probe techniques as an investigation tool for semiconductor nanostructures and devices

    Författare :Jovana Colvin; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; AFM; STM; KPM; SCM; c-AFM; Crystal growth; Doping; Defects;

    Sammanfattning : Semiconductor nanostructure based devices provide new opportunities for contributing to a sustainable energy usage. This includes harvesting of energy (solar cells) and saving of energy, e.g. in lighting (light-emitting diodes, LEDs) and transfer of energy (power devices). LÄS MER