Sökning: "positron annihilation spectroscopy PAS"
Hittade 3 avhandlingar innehållade orden positron annihilation spectroscopy PAS.
1. Modelling of radiation damage and positron annihilation in metallic materials
Sammanfattning : The radiation damage is one of the key concerns in the research of materials used in radiation environments. In this thesis, we theoretically investigate the radiation damage phenomenon by focusing on two important topics: the defect production and evolution, and the defect characterization. The first part aims at two aspects. LÄS MER
2. Detection and removal of traps at the SiO2/SiC interface
Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER
3. Hydrogen diffusion and ion implantation in silicon carbide
Sammanfattning : Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived. LÄS MER