Sökning: "6H-SiC"
Visar resultat 1 - 5 av 33 avhandlingar innehållade ordet 6H-SiC.
1. Electrical properties of thermal oxides on SiC manufactured in an alumina furnace
Sammanfattning : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. LÄS MER
2. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers
Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER
3. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications
Sammanfattning : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. LÄS MER
4. Electron paramagnetic resonance study of defects in SiC
Sammanfattning : Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising material for high-power, high-frequency and high-temperature applications. LÄS MER
5. Sublimation Growth and Performance of Cubic Silicon Carbide
Sammanfattning : Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at high temperature, and in harsh environments. Hexagonal polytypes of SiC, such as 6H-SiC and 4H-SiC are available on the power device markets. LÄS MER
