Sökning: "interface states"

Visar resultat 1 - 5 av 138 avhandlingar innehållade orden interface states.

1. 1. Consequences of a non-trivial band-structure topology in solids : Investigations of topological surface and interface states

   Författare :Magnus H. Berntsen; Oscar Tjernberg; Philip Hofmann; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; spin- and angle-resolved photoelectron spectroscopy; time-of-flight analyzer; laser based light source; topological insulator; topological crystalline insulator; thin films; surface state; interface state; Bi2Se3; Pb1-xSnxSe;

   Sammanfattning : The development and characterization of experimental setups for angle-resolved photoelectron spectroscopy (ARPES) and spin- and angle-resolved photoelectron spectroscopy (SARPES) is described. Subsequently, the two techniques are applied to studies of the electronic band structure in topologically non-trivial materials. LÄS MER

3. 2. Shallow traps at the SiO₂/SiC interface

   Författare :Halldor Olafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; deep level transient spectroscopy DLTS ; capacitance-voltage C-V ; metal-oxide-semiconductor MOS ; thermally stimulated current TSC ; interface states;

   Sammanfattning : .... LÄS MER

4. 3. Photo-induced dark states influorescence spectroscopy – investigations & applications

   Författare :Andriy Chmyrov; Jerker Widengren; Johan Hofkens; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; fluorescence correlation spectroscopy; triplet state; isomerisation; photobleaching; quenching; diffusion; total internal reflection; interface; Spectroscopy; Spektroskopi;

   Sammanfattning : This thesis focuses on investigations of transient dark states of fluorescentmolecules using spectroscopic techniques. The main purpose is to show andconvince the reader that transient dark states are not always a nuisance, butalso represent an additional source of information. LÄS MER

5. 4. Influence of Electron Charge States in Nanoelectronic Building Blocks

   Författare :Johan Piscator; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; silicon nanowire; conductance method; MOS; Schottky barrier lowering; CV; silicon on insulator SOI ; high-k; interface states; Schottky contacts; TSC.;

   Sammanfattning : The continued efforts to improve performance and decrease size of semiconductor logic devices are facing serious challenges. In order to further develop one of the most important nanoelectronic building blocks, the metal-oxide-semiconductor field-effect-transistor (MOSFET), several major problems have to be solved. LÄS MER

7. 5. Detection and removal of traps at the SiO2/SiC interface

   Författare :Halldor Olafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

   Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER