Sökning: "metal-oxide-semiconductor MOS"

Visar resultat 1 - 5 av 25 avhandlingar innehållade orden metal-oxide-semiconductor MOS.

  1. 1. Gas sensitivity of modified metal-oxide-semiconductor devices

    Författare :Eva Hedborg Karlsson; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Gas sensitive thin metal-oxide-semiconductor (MOS) structures have been used to study the effect of different modifications of the gate metal. In order to increase the selectivity of the gas sensor photoresist was used as a gas permeable membrane. LÄS MER

  3. 2. Surface and Interface Phenomena Studied with Pd Metal-Oxide-semiconductor Structures : Adsorption, catalytic reactions, hydrogen sensing and Pd restructuring

    Författare :Mats Eriksson; Wolfgang Göpel; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The electronic properties of palladium metal-oxide-semiconductor (Pd-MOS) structures are highly sensitive to hydrogen over a large pressure range. Such devices have been found useful in several applications, e.g. as a chemical sensing element in the so called electronic nose. LÄS MER

  4. 3. Detection and removal of traps at the SiO2/SiC interface

    Författare :Halldor Olafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER

  5. 4. Shallow traps at the SiO₂/SiC interface

    Författare :Halldor Olafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; deep level transient spectroscopy DLTS ; capacitance-voltage C-V ; metal-oxide-semiconductor MOS ; thermally stimulated current TSC ; interface states;

    Sammanfattning : .... LÄS MER

  7. 5. Charge carrier dynamics at the SiO2/SiC interface

    Författare :Mahdad Sadeghi; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface quality; SiO2 SiC metal oxide semiconductor MOS ; high frequency C-V measurement; oxidation of SiC; capacitance simulations; thermal non-equilibrium;

    Sammanfattning : .... LÄS MER