Sökning: "SiO2 SiC metal oxide semiconductor MOS"

Hittade 5 avhandlingar innehållade orden SiO2 SiC metal oxide semiconductor MOS.

1. 1. Detection and removal of traps at the SiO2/SiC interface

   Författare :Halldor Olafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

   Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER

3. 2. Shallow traps at the SiO₂/SiC interface

   Författare :Halldor Olafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; deep level transient spectroscopy DLTS ; capacitance-voltage C-V ; metal-oxide-semiconductor MOS ; thermally stimulated current TSC ; interface states;

   Sammanfattning : .... LÄS MER

4. 3. Charge carrier dynamics at the SiO2/SiC interface

   Författare :Mahdad Sadeghi; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface quality; SiO2 SiC metal oxide semiconductor MOS ; high frequency C-V measurement; oxidation of SiC; capacitance simulations; thermal non-equilibrium;

   Sammanfattning : .... LÄS MER

5. 4. Device characteristics of sublimation grown 4H-SiC layers

   Författare :Rafal Ciechonski; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

7. 5. Design and process issues of junction- and ferroelectric-field effect transistors in silicon carbide

   Författare :Sang-Mo Koo; KTH; []
   Nyckelord :;

   Sammanfattning : In today’s solid-state electronics, Si and SiO2 are thedominant materials used. However, new materials such as SiC orferroelectrics are required for some special applications sincesuperior characteristics can be achieved in electronic devices. LÄS MER