Sökning: "Halldor Olafsson"

Hittade 2 avhandlingar innehållade orden Halldor Olafsson.

1. 1. Detection and removal of traps at the SiO2/SiC interface

   Författare :Halldor Olafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

   Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER

3. 2. Shallow traps at the SiO₂/SiC interface

   Författare :Halldor Olafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; deep level transient spectroscopy DLTS ; capacitance-voltage C-V ; metal-oxide-semiconductor MOS ; thermally stimulated current TSC ; interface states;

   Sammanfattning : .... LÄS MER