Sökning: "noise figure"
Visar resultat 6 - 10 av 56 avhandlingar innehållade orden noise figure.
6. Optimum GaN HEMT Oscillator Design Targeting Low Phase Noise
Sammanfattning : The thesis considers design of low phase noise oscillators, given the boundary condition of the used technology. Important conditions are the power handling of the active device, device noise floor, the quality factor of the resonator, bias settings, and low frequency noise. LÄS MER
7. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers
Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER
8. Design Aspects of Fully Integrated Multiband Multistandard Front-End Receivers
Sammanfattning : In this thesis, design aspects of fully integrated multibandmultistandard front-end receivers are investigated based onthree fundamental aspects: noise, linearity and operatingfrequency. System level studies were carried out to investigatethe effects of different modulation techniques, duplexing andmultiple access methods on the noise, linearity and selectivityperformance of the circuit. LÄS MER
9. Low Phase Noise GaN HEMT Oscillator Design based on High-Q resonators
Sammanfattning : The thesis considers the design and optimization of oscillators targeting low phase noise, given boundary conditions from the technology. Crucial technology figures are power capability, RF noise figure, low-frequency noise and the quality factor (Q-factor) of the resonator. LÄS MER
10. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies
Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER