Sökning: "low-noise amplifier"
Visar resultat 1 - 5 av 58 avhandlingar innehållade orden low-noise amplifier.
Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER
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Sammanfattning : In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermediate frequency (IF) amplifiers. The system noise temperature is among the most important parameters of a receiver and requires state of the art components. LÄS MER
Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. LÄS MER
Sammanfattning : Radio-astronomy deals with signals and radiations of extremely weak intensity. Also, it requires robust and rugged technologies able to sustain and prevent the Radio Frequency Interferences (RFI). LÄS MER