Sökning: "low-noise amplifier"

Visar resultat 1 - 5 av 37 avhandlingar innehållade orden low-noise amplifier.

  1. 1. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

    Författare :Pirooz Chehrenegar; [2012]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

    Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER

  3. 2. Development of Cryogenic Low Noise 4-8 GHz HEMT Amplifier and its Advanced Characterization

    Författare :Erik Sundin; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; shot-noise; low noise amplifier; cryogenic amplifier; sis; noise measurement; HEMT;

    Sammanfattning : In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermediate frequency (IF) amplifiers. The system noise temperature is among the most important parameters of a receiver and requires state of the art components. LÄS MER

  4. 3. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; [2012]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. LÄS MER

  5. 4. Low-Noise Amplifier Design for Ultra-Wideband Systems

    Detta är en avhandling från Linköping : Linköpings universitet

    Författare :Adriana Serban Craciunescu; Linköpings universitet.; Linköpings universitet.; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TECHNOLOGY; TEKNIKVETENSKAP;

    Sammanfattning : The low-noise amplifier (LNA) remains a critical block in every receiver front-end. As the development of the widcband, low-power and low-cost wireless systems continues, new LNA topologies and design methodologies have become one of the most interesting challenges in the field of radio frequency system design. LÄS MER

  7. 5. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies

    Detta är en avhandling från Linköping : Linköpings universitet

    Författare :Klas Eriksson; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InP; WR05; packaging; noise figure; substrate modes; WR03.; multiple layer interconnect; double heterojunction bipolar transistor DHBT ; G-band; wideband; H-band; waveguide transition; distributed amplifier DA ; millimeter-wave; amplifier; low-noise amplifier LNA ; membrane technology; waveguide module; submillimeter-wave;

    Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER