Sökning: "low-noise amplifier"
Visar resultat 1 - 5 av 52 avhandlingar innehållade orden low-noise amplifier.
1. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers
Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER
2. Cryogenic low noise amplifiers for microwave frequencies
Sammanfattning : .... LÄS MER
3. Development of Cryogenic Low Noise 4-8 GHz HEMT Amplifier and its Advanced Characterization
Sammanfattning : In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermediate frequency (IF) amplifiers. The system noise temperature is among the most important parameters of a receiver and requires state of the art components. LÄS MER
4. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. LÄS MER
5. Low-Noise Amplifier Design for Ultra-Wideband Systems
Sammanfattning : The low-noise amplifier (LNA) remains a critical block in every receiver front-end. As the development of the widcband, low-power and low-cost wireless systems continues, new LNA topologies and design methodologies have become one of the most interesting challenges in the field of radio frequency system design. LÄS MER
