Sökning: "Indium phosphide InP"

Visar resultat 1 - 5 av 19 avhandlingar innehållade orden Indium phosphide InP.

1. 1. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

   Författare :Anders Mellberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

   Sammanfattning : .... LÄS MER

3. 2. InP-based photonic crystals : Processing, Material properties and Dispersion effects

   Författare :Audrey Berrier; Srinivasan Anand; Alfred Forchel; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Photonic crystals; indium phosphide; photonic bandgap; Bloch modes; slow light; dispersion; coupled cavity waveguides; chemically assisted ion beam etching; lag effect; cavities; optical losses; carrier transport; carrier lifetimes; negative refraction; photonic bandstructure; Physics; Fysik;

   Sammanfattning : Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic bandgap, i.e., a range of wavelength for which light propagation is forbidden. The special band structure related dispersion properties offer a realm of novel functionalities and interesting physical phenomena. LÄS MER

4. 3. InP HEMT Technology and Applications

   Författare :Anders Mellberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Indium phosphide InP ; cryogenic LNA; high electron mobility transistor HEMT ; metal-insulator-metal capacitor; MODFET; thin film resistor; semiconductor device fabrication; MMIC;

   Sammanfattning : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. LÄS MER

5. 4. Two-Dimensional Photonic Crystals in InP-based Materials

   Författare :Mikaël Mulot; KTH; []
   Nyckelord :Photonic crystals; photonic bandgap materials; indium phosphide; dry etching; chemically assisted ion beam etching; reactive ion etching; electron beam lithography; photonic integrated circuits; optical waveguides; resonant cavities; optical filterin;

   Sammanfattning : Photonic crystals (PhCs) are structures periodic in thedielectric constant. They exhibit a photonic bandgap, i.e., arange of wavelengths for which light propagation is forbidden. LÄS MER

7. 5. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

   Författare :Mikael Malmkvist; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

   Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. LÄS MER