Sökning: "ion beam lithography"

Visar resultat 11 - 15 av 32 avhandlingar innehållade orden ion beam lithography.

  1. 11. Nanopatterning by Swift Heavy Ions

    Författare :Marek Skupinski; Klas Hjört; Jens Jensen; Christina Trautmann; Uppsala universitet; []
    Nyckelord :Materials science; swift heavy ions; lithography; nanopatterning; self-assembly; Materialvetenskap;

    Sammanfattning : Today, the dominating way of patterning nanosystems is by irradiation-based lithography (e-beam, DUV, EUV, and ions). Compared to the other irradiations, ion tracks created by swift heavy ions in matter give the highest contrast, and its inelastic scattering facilitate minute widening and high aspect ratios (up to several thousands). LÄS MER

  3. 12. Template-Based fabrication of Nanostructured Materials

    Författare :Anders Johansson; Mats Boman; Kornelius Nielsch; Uppsala universitet; []
    Nyckelord :Inorganic chemistry; Nanoparticles; nanotubes; anodic aluminium oxide; electroless deposition; ALD; Nb2O5; Prussian blue; palladium; copper; ion beam lithography; TiO2; SiO2; Oorganisk kemi;

    Sammanfattning : Materials prepared on the nanoscale often exhibit many different properties compared to the same materials in their bulk-state. Interest in nanostructured materials has increased because of these properties in fields such as microelectronics, catalysis, optics and sensors. LÄS MER

  4. 13. Step Edge Junctions in YBa2Cu3O7-δ High-Tc Superconductors

    Författare :Huai-ren Yi; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; YBa2Cu3O7-delta; barrier property; Josephson flux-flow transistor; laser deposition; electron-beam lithography; magnetron sputtering; thin film; step edge junction; amorphous carbon;

    Sammanfattning : This thesis describes experimental work on GdBa2Cu3O7-.delta. (GBCO) thin films, YBa2Cu3O7-.delta. LÄS MER

  5. 14. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

    Författare :Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. LÄS MER

  7. 15. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    Författare :Otto Zsebök; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Sammanfattning : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). LÄS MER