Sökning: "step edge junction"

Visar resultat 1 - 5 av 7 avhandlingar innehållade orden step edge junction.

  1. 1. YBa2Cu3O7-δ Biepitaxial and Step Edge Josephson Junctions on MgO Substrates. SQUID Amplifier

    Författare :Jaime Ramos; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; step edge junction; noise; biepitaxial junction; energy resolution; high-TC superconductor; dc SQUID; YBa2Cu3O7; laser deposition; CeO2; amplifier; Germany; sapphire; MgO;

    Sammanfattning : This thesis concerns the preparation of Josephson junctions and their applications in Superconducting Quantum Interference Devices (SQUIDs). High temperature superconductors were used for operation at 77 K, the boiling temperature of liquid nitrogen. LÄS MER

  3. 2. Step Edge Junctions in YBa2Cu3O7-δ High-Tc Superconductors

    Författare :Huai-ren Yi; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; YBa2Cu3O7-delta; barrier property; Josephson flux-flow transistor; laser deposition; electron-beam lithography; magnetron sputtering; thin film; step edge junction; amorphous carbon;

    Sammanfattning : This thesis describes experimental work on GdBa2Cu3O7-.delta. (GBCO) thin films, YBa2Cu3O7-.delta. LÄS MER

  4. 3. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER

  5. 4. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

    Författare :Andrea Troian; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

    Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER

  7. 5. Sub-micron Structures in Laser Ablated YBa2Cu3O7-x Thin Films

    Författare :Peter Larsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : This thesis treats the epitaxial growth of high-Tc superconductors and other perovskite oxides as well as the patterning of these into sub-micron structures for superconducting electronic devices. A computer controlled laser ablation system, based on a KrF excimer laser (248 nm) to induce ablation, was developed to allow complex thin film growth processes. LÄS MER