Sökning: "GaNAs"
Visar resultat 1 - 5 av 11 avhandlingar innehållade ordet GaNAs.
1. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy
Sammanfattning : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. LÄS MER
2. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)
Sammanfattning : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). LÄS MER
3. Minnet går gränsvakt. Fyra poeter ur 1970-talets grekiska diktargeneration
Sammanfattning : The primary aim of the present study is to reveal the creative awakening of Michalis Ganas, Maria Kirtzaki, Tzeni Mastoraki and Kostas Papageorgiou, four poets of the Greek 1970s Generation. All four poets were born during the decade of the 1940s. LÄS MER
4. Spin-dependent recombination in Ga(In)NAs alloys
Sammanfattning : The abilities to control and manipulate electron spin, especially in semiconductors, lead to many interesting proposals for spin-functional devices in future spintronics and quantum information technology. A key requirement for the success of these proposals is that the spin functionality should be operational at room temperature (RT), which remains as a great challenge. LÄS MER
5. Room-temperature defect-engineered spin functionalities in Ga(In)NAs alloys
Sammanfattning : Semiconductor spintronics is one of the most interesting research fields that exploits both charge and spin properties for future photonics and electronic devices. Among many challenges of using spin in semiconductors, efficient generation of electron spin polarization at room temperature (RT) remains difficult. LÄS MER