Sökning: "AlGaN GaN HFET"

Hittade 5 avhandlingar innehållade orden AlGaN GaN HFET.

1. 1. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

3. 2. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

   Författare :Stefan Davidsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al_{2< sub>O3< sub>}; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

   Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER

4. 3. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

   Författare :Stefan Davidsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MBE; 2DEG; heterostructure field effect transistor; molecular beam epitaxy; epitexial growth; GaN; III-nitride; AlGaN; two dimensional electron gas; HFET; AlN;

   Sammanfattning : .... LÄS MER

5. 4. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

   Författare :Otto Zsebök; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

   Sammanfattning : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). LÄS MER

7. 5. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

   Författare :Martin Fagerlind; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HFET; passivation characterization; passivation; AlGaN GaN heterostructure;

   Sammanfattning : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. LÄS MER