Sökning: "Peder Bergman"

Hittade 3 avhandlingar innehållade orden Peder Bergman.

  1. 1. Photoluminescence Characteristics of III-Nitride Quantum Dots and Films

    Författare :Martin Eriksson; Per-Olof Holtz; Peder Bergman; Fredrik Karlsson; Volodymyr Khranovskyy; Yasuhiko Arakawa; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : III-Nitride semiconductors are very promising in both electronics and optical devices. The ability of the III-Nitride semiconductors as light emitters to span the electromagnetic spectrum from deep ultraviolet light, through the entire visible region, and into the infrared part of the spectrum, is a very important feature, making this material very important in the field of light emitting devices. LÄS MER

  3. 2. 4H-SiC epitaxy investigating carrier lifetime and substrate off-axis dependence

    Författare :Louise Lilja; Peder Bergman; Jawad ul-Hassan; Ulrike Grossner; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compared to Si-based electronics, SiC based electronics have an improved energy efficiency. LÄS MER

  4. 3. Epitaxial Growth and Characterization of SiC for High Power Devices

    Författare :Jawad ul Hassan; Peder Bergman; Hidekazu Tsuchida; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Silicon Carbide (SiC) is a semiconductor with a set of superior properties, including wide bandgap, high thermal conductivity, high critical electric field and high electron mobility. This makes it an excellent material for unipolar and bipolar electronic device applications that can operate under high temperature and high power conditions. LÄS MER