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Visar resultat 6 - 10 av 43 avhandlingar som matchar ovanstående sökkriterier.

  1. 6. High Frequency Analysis of Silicon RF MOS Transistors

    Författare :Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

    Sammanfattning : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. LÄS MER

  2. 7. Towards Low-Voltage, High-Current : A pioneering drive concept for battery electric vehicles

    Författare :Stefan Haller; Kent Bertilsson; Bengt Oelmann; Peng Cheng; Dieter Gerling; Mittuniversitetet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low voltage; high current; EV; BEV; electrical machine; power electronics; MOSFET;

    Sammanfattning : The first electric low-voltage vehicles were constructed in the mid-19th century, but by the early 20th century they were progressively replacedby successors with internal combustion engines. As the consequences ofusing fossil fuels are better understood, our society is now transitioning back. LÄS MER

  3. 8. MOSFET Modeling Aimed at Minimizing EMI in Switched DC/DC Converters Using Active Gate Control

    Författare :Andreas Henriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electromagnetic interference; Semiconductor device modeling; Adaptive control; MOSFET switches; Electromagnetic compatibility; State space methods; DC-DC power conversion; Power semiconductor diodes; Semiconductor device measurements;

    Sammanfattning : This thesis deals with electromagnetic interference that can arise from switched DC/DC-converters intended for low-power applications, e.g. within the telecom or automotiveindustry. LÄS MER

  4. 9. Engineering Multicomponent Nanostructures for MOSFET, Photonic Detector and Hybrid Solar Cell Applications

    Författare :Asghar Jamshidi Zavaraki; Hans Ågren; Kevin J. Webb; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Epitaxial G rowth; Reduced Pressure Chemical Vapor Deposition; GeSnSiC; MOSFET; Photonic Detector; Resistivity; Phosp hor and Boron doping; Colloidal QDs Sensitized Solar Cell; Cd - free and Cd - based QDs; High Resolution Reciprocal Lattice Map; High Resolution X - Ray Diffraction; High Resolution Transmission Electron Microscopy; High resolution Scanning E lectron Microscopy .;

    Sammanfattning : Silicon technologyhas been seekingfor a monolithic solution for a chip where data processing and data communication is performed in the CMOS part and the photonic component, respectively. Traditionally, silicon has been widely considered for electronic applications but not for photonic applications due to its indirect bandgap nature. LÄS MER

  5. 10. On Reliability of SiC Power Devices in Power Electronics

    Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER