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Visar resultat 21 - 25 av 43 avhandlingar som matchar ovanstående sökkriterier.

1. 21. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

   Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

3. 22. Low-Power Nanowire Circuits and Transistors

   Författare :Anil Dey; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : This thesis explores several novel material systems and innovative device concepts enabled by nanowire technology. State-of-the-art fabrication techniques such as electron beam lithography and atomic layer deposition are utilized to achieve high control and quality in the device fabrication. LÄS MER

4. 23. High Temperature Bipolar SiC Power Integrated Circuits

   Författare :Saleh Kargarrazi; Carl-Mikael Zetterling; Ana Rusu; Shankar Narayanan Ekkanath Madathil; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : In the recent decade, integrated electronics in wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme environments (e.g high-temperature and high radiation). Such electronics have applications in down-hole drilling, automobile-, air- and space- industries. LÄS MER

5. 24. Vertical III-V Nanowire Transistors for Low-Power Electronics

   Författare :Abinaya Krishnaraja; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metal-oxide-semiconductor field-effect transistor MOSFET ; Steep slope; Tunnel Field-Effect Transistors; Vertical nanowire; III-V materials; semiconducting III-V; InAs; GaSb; InGaAsSb; PMOS; Transistor; Electronics;

   Sammanfattning : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. LÄS MER

7. 25. High Frequency (MHz) Planar Transformers for Next Generation Switch Mode Power Supplies

   Författare :Radhika Ambatipudi; Kent Bertilsson; Bengt Oelmann; Jesus Doval Gandoy; Hans-Peter Nee; Torbjörn Thiringer; Göran Thungström; Mittuniversitetet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Planar Magnetics; DC-DC Converters; Switch Mode Power Supplies; MHz Frequency Region;

   Sammanfattning : Increasing the power density of power electronic converters while reducing or maintaining the same cost, offers a higher potential to meet the current trend inrelation to various power electronic applications. High power density converters can be achieved by increasing the switching frequency, due to which the bulkiest parts, such as transformer, inductors and the capacitor's size in the convertercircuit can be drastically reduced. LÄS MER