Sökning: "Junction Field-Effect Transistor JFET"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden Junction Field-Effect Transistor JFET.

  1. 1. On Reliability of SiC Power Devices in Power Electronics

    Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

  3. 2. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

  4. 3. Design and process issues of junction- and ferroelectric-field effect transistors in silicon carbide

    Författare :Sang-Mo Koo; KTH; []
    Nyckelord :;

    Sammanfattning : In today’s solid-state electronics, Si and SiO2 are thedominant materials used. However, new materials such as SiC orferroelectrics are required for some special applications sincesuperior characteristics can be achieved in electronic devices. LÄS MER

  5. 4. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters

    Författare :Georg Tolstoy; Hans-Peter Nee; Stig Munk-Nielsen; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Bipolar Junction Transistor BJT ; Resonant converter; Series-resonant converter SLR ; Base drive circuits; High- Efficiency Converters; High-Frequency Converters; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. LÄS MER

  7. 5. On Gate Drivers and Applications of Normally-ON SiC JFETs

    Författare :Dimosthenis Peftitsis; Hans-Peter Nee; Johann Walter Kolar; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Normally-ON Junction Field-Effect Transistors JFETs ; Gate-Drive Circuits; Protection circuits; High-Efficiency Converters.; Järnvägsgruppen - Elsystem; Järnvägsgruppen - Elsystem;

    Sammanfattning : In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterparts. LÄS MER