Sökning: "Microwave transistor"

Visar resultat 1 - 5 av 56 avhandlingar innehållade orden Microwave transistor.

  1. 1. Microwave Transistor Noise Model Extraction Methods and a Non-Contacting Scattering Parameter Measurement Method

    Författare :Jörgen Stenarson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; extraction; S-parameter; noise parameter; vector network analyzer; electro-magnetic probe; microwave; non-contacting testing; transistor noise model; VNA; EM-probe; non-invasive testing;

    Sammanfattning : This thesis has two parts. The first part discuss noise model extraction methods for FETs. The second part describe theory and implementation of a non-contacting S-parameter measurement method. Noise is an important aspect for a circuit designer, because noise generated in the circuit is a sensitivity limiting factor. LÄS MER

  3. 2. Graphene FETs in Microwave Applications

    Författare :Omid Habibpour; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave amplifiers; S-parameters characterisation; device modelling; MMIC; device fabrication; Graphene; subharmonic resistive mixers; integrated circuits; harmonic balance analysis; microwave FETs;

    Sammanfattning : Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising material for future high-speed nanoelectronics due to its intrinsic superior carrier mobility and very high saturation velocity. LÄS MER

  4. 3. Silicon Carbide Microwave Devices

    Författare :Joakim Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  5. 4. Nonlinear Microwave Measurement Architectures for Wideband Device Characterization

    Författare :Sebastian Gustafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nonlinear characterization; wideband; GaN HEMT; oscilloscope; microwave; active load-pull;

    Sammanfattning : The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular networks has resulted in a golden age for the development of wireless technology. Modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand. LÄS MER

  7. 5. Microwave and millimeter wave CMOS Characterization, modeling, and design

    Författare :Mattias Ferndahl; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

    Sammanfattning : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. LÄS MER