Sökning: "Gate drive circuits"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden Gate drive circuits.

1. 1. On Reliability of SiC Power Devices in Power Electronics

   Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

3. 2. On Gate Drivers and Applications of Normally-ON SiC JFETs

   Författare :Dimosthenis Peftitsis; Hans-Peter Nee; Johann Walter Kolar; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Normally-ON Junction Field-Effect Transistors JFETs ; Gate-Drive Circuits; Protection circuits; High-Efficiency Converters.; Järnvägsgruppen - Elsystem; Järnvägsgruppen - Elsystem;

   Sammanfattning : In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterparts. LÄS MER

4. 3. On SiC JFET converters: components, gate-drives and main-circuit conditions

   Författare :Björn Ållebrand; Hans-Peter Nee; Lutz Josef; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power JFET; SiC JFET; Silicon Carbide; PSpice; Simulations; Gate drive; Blanking times; Normally-on; Modeling; Commutation transients; Electric power engineering; Elkraftteknik;

   Sammanfattning : This thesis deals with Silicon Carbide Junction Field Effect Transistors (SiC JFETs) - how to use them to their full potential in power electronic circuits, how to model them in a power electronic simulation program, and how a gate drive can be built. To fully utilize the low on-state losses of SiC JFETs it is suggested that SiC JFETs should not be equipped with anti-parallel diodes. LÄS MER

5. 4. Low-Power Nanowire Circuits and Transistors

   Författare :Anil Dey; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : This thesis explores several novel material systems and innovative device concepts enabled by nanowire technology. State-of-the-art fabrication techniques such as electron beam lithography and atomic layer deposition are utilized to achieve high control and quality in the device fabrication. LÄS MER

7. 5. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

   Författare :Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
   Nyckelord :Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER