Sökning: "Kiselkarbid"

Visar resultat 1 - 5 av 9 avhandlingar innehållade ordet Kiselkarbid.

  1. 1. Multiphysics Characterization of SiC Power Modules

    Detta är en avhandling från Stockholm, Sweden : KTH Royal Institute of Technology

    Författare :Yafan Zhang; Hans-Peter Nee Nee; Mietek Bakowski; Ilja Belov; Alberto Castellazzi; [2018]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; power electronics; power electronics packaging; experiment; modeling and simulation; computational fluid dynamics; finite element analysis; multiphysics; Kiselkarbid; effektelektronik; effektelektronisk kapsling; experiment; modellering och simulering; flödesdynamisk numerisk modellering; finit-element-analys; multifysik; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : This thesis proposes several novel silicon carbide power module design concepts. The goal has been to address the problems with the present designs. The electrical, thermal, and thermomechanical performances of the demonstrators have been evaluated along with presentations of methodologies of experimental and numerical characterizations. LÄS MER

  2. 2. On Reliability of SiC Power Devices in Power Electronics

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

  3. 3. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics

    Detta är en avhandling från KTH Royal Institute of Technology

    Författare :Arash Edvin Risseh; Hans-Peter Nee; Torbjörn Thiringer; [2019]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Thermoelectricity; Power converter; Silicon Carbide; MOSFET; Power management; Thermoelectric generator; Renewable energy; Vehicle; Power electronic; Waste heat; Ultra-low inductance; Power module; Termoelektrisk energiomvandling; Kiselkarbid MOSFET; Effektomvandlare; Förnybar energikälla; Effektelektronik; Spillvärme; Effektmodul; Låg induktiv module; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. LÄS MER

  4. 4. Chloride-based Silicon Carbide CVD

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; [2008]

    Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER

  5. 5. Selectivity Enhancement of Gas Sensitive Field Effect Transistors by Dynamic Operation

    Detta är en avhandling från Linköping, Sweden / Aachen, Germany : Linköping University Electronic Press / Shaker Verlag

    Författare :Christian Bur; Anita Lloyd Spetz; Andreas Schütze; Mike Andersson; Stephen Semancik; [2015]

    Sammanfattning : Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been applied to various applications mainly in the area of exhaust and combustion monitoring. So far, these sensors have normally been operated at constant temperatures and adaptations to specific applications have been done by material and transducer platform optimization. LÄS MER