Sökning: "sige"

Visar resultat 1 - 5 av 57 avhandlingar innehållade ordet sige.

1. 1. Near-infrared photodetectors based on Si/SiGe nanostructures

   Författare :Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

   Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER

3. 2. Ultrathin gate oxides for future SiGe CMOS devices

   Författare :Alok Sareen; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gate oxide; ultrathin; C-V; SiGe; valence band offset;

   Sammanfattning : .... LÄS MER

4. 3. Source and drain engineering in SiGe-based pMOS transistors

   Författare :Christian Isheden; Mikael Östling; Simon Deleonibus; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; Electronics; Elektronik;

   Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER

5. 4. Interaction of Ni with SiGe for electrical contacts in CMOS technology

   Författare :Johan Seger; Shi-Li Zhang; Christian Lavoie; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; MOSFET; NiSi; SiGe; phase formation; morphological stability; Fysik; Physics; Fysik;

   Sammanfattning : This thesis investigates the reactive formation of Ni mono-gernanosilicide, NiSi1-uGeu, for contact metallization of future CMOS devices where Si1-xGex can be present in the gate, source and drain of a MOSFET. Although the investigation has been pursued with a strong focus on materials aspects, issues related to process integration in MOSFETs both on conventional bulk Si and ultra-thin body SOI have been taken into consideration. LÄS MER

7. 5. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures

   Författare :Chun-Xia Du; Fransesco Priolo; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electroluminescence; diode; transistor; hot electron; recombination; excitation; de-excitation; Auger effect; molecular beam epitaxy; Er; Si; SiGe;

   Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER