Sökning: "GaN template"

Visar resultat 1 - 5 av 7 avhandlingar innehållade orden GaN template.

  1. 1. GaN/AlN Multiple Quantum Well Structures

    Författare :Xinju Liu; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Sammanfattning : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. LÄS MER

  3. 2. Controlled growth of hexagonal GaN pyramids and InGaN QDs

    Författare :Anders Lundskog; Erik Janzén; Urban Forsberg; Per-Olof Holtz; Lars-Erik Wernersson; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Gallium-nitride (GaN) and its related alloys are direct band gap semiconductors, with a wide variety of applications. The white light emitting diode (LED) is of particular importance as it is expected to replace energy inefficient light bulb and hazardous incandescent lamps used today. LÄS MER

  4. 3. P-type and polarization doping of GaN in hot-wall MOCVD

    Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zhaoxia Bi; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. LÄS MER

  5. 4. Surface studies on α–sapphire for potential use in GaN epitaxial growth

    Författare :Björn Agnarsson; Mats Göthelid; Anders Sandell; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Surfaces and interfaces; Ytor och mellanytor;

    Sammanfattning : This Licentiate thesis summarizes the work carried out by the author the years 2004 to 2008 at the University of Iceland and the Royal Institute of Technology (KTH) in Sweden. The aim of the project was to investigate the structure of sapphire (alpha-Al2O3) surfaces, both for pure scientific reasons and also for potential use as substrate for GaN-growth by molecular beam epitaxy. LÄS MER

  7. 5. Growth of thick GaN layers on sapphire by Hydride Vapour Phase Epitaxy

    Författare :Henrik Larsson; Werner Seifert; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Gallium nitride (GaN) is a wide bandgap material that is already extensively used in industrial production of optoelectronic devices (light emitters) that operate in the blue and ultraviolet wavelength range. GaN is interesting not only because it has a wide bandgap (3. LÄS MER