Sökning: "sapphire"

Visar resultat 16 - 20 av 65 avhandlingar innehållade ordet sapphire.

  1. 16. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    Författare :Otto Zsebök; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Sammanfattning : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). LÄS MER

  3. 17. DEVELOPMENT OF A HIGH ENERGY TI:SAPPHIRE LASER FOR THE EXCITATION OF EXTREME ULTRAVIOLET LASERS

    Författare :Dale Martz; Jorge Rocca; Colorado State University; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SRA - E-vetenskap SeRC ; SRA - E-Science SeRC ;

    Sammanfattning : This dissertation describes the design, construction and characterization of a high energy chirped-pulse amplification Titanium-Sapphire laser system for the excitation of Extreme Ultraviolet (EUV) lasers. Compact EUV lasers have made possible nano-scale imaging, dense plasma diagnostics and photo-chemistry and photo-physics studies. LÄS MER

  4. 18. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

    Författare :Stefan Davidsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MBE; 2DEG; heterostructure field effect transistor; molecular beam epitaxy; epitexial growth; GaN; III-nitride; AlGaN; two dimensional electron gas; HFET; AlN;

    Sammanfattning : .... LÄS MER

  5. 19. Epitaxy of oxide and nitride thin films grown by magnetron sputtering

    Författare :Faezeh Alijan Farzad Lahiji; Per Eklund; Arnaud Le Febvrier; Biplab Paul; Tomas Nyberg; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The need for electronic devices with new functionalities has caused research to move in a way to design and utilize materials with high-performance thermoelectricity, widely used in batteries, sensors, and electronic devices. Two-dimensional materials (2D) with unique structures and remarkable properties have been identified to fabricate oxide heteroepitaxy. LÄS MER

  7. 20. Surface studies on α–sapphire for potential use in GaN epitaxial growth

    Författare :Björn Agnarsson; Mats Göthelid; Anders Sandell; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Surfaces and interfaces; Ytor och mellanytor;

    Sammanfattning : This Licentiate thesis summarizes the work carried out by the author the years 2004 to 2008 at the University of Iceland and the Royal Institute of Technology (KTH) in Sweden. The aim of the project was to investigate the structure of sapphire (alpha-Al2O3) surfaces, both for pure scientific reasons and also for potential use as substrate for GaN-growth by molecular beam epitaxy. LÄS MER