Sökning: "bipolar transistor"

Visar resultat 21 - 25 av 51 avhandlingar innehållade orden bipolar transistor.

1. 21. Electro-thermal simulations and measurements of silicon carbide power transistors

   Författare :Wei Liu; Carl-Mikael Zetterling; Nicholas G. Wright; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; silicon carbide; power device; metal semiconductor field-effect transistor; bipolar junction transistor; electro-thermal simulation; Elektronik; Electronics; Elektronik;

   Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER

3. 22. Metall organic vapour phase epitaxy for advanced III-V devices

   Författare :Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. LÄS MER

4. 23. Low phase noise voltage controlled micro- and millimeter wave oscillators

   Författare :Stefan Andersson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; radio; anti series; microstrip resonator; silicon bipolar transistor; amplitude limiter; cavity resonator; varactor; transposed gain; MESFET; automatic gain control; VCO; delay line; laser; RF; oscillation criteria; millimetre wave; oscillator; mm-wave; noise; multiplier; fibre optic; SAW; DRO; PLL; surface acoustic wave; Si BJT; 1 f noise; FM noise; HEMT; clipping diode; HBT; YIG sphere; device; terfenol; gunn diode; stabilised; YIG film; quarts crystal; phase locked loop; magnetostrictive; resonator; phase error; whispering gallery mode; sapphire resonator; Fabry-Perot resonator; PHEMT; microwave; HFET; phase noise; DR; dielectric resonator; PM noise; balanced oscillator; piezo electric; AGC; frequency discriminator;

   Sammanfattning : .... LÄS MER

5. 24. GaAs based Vertical-Cavity Surface-Emitting Transistor-Lasers

   Författare :Yu Xiang; Mattias Hammar; Guihem Almuneau; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : The ever-increasing demand for broadband capacity of the global optical communication networks puts enormous requirements on the semiconductor laser used in the optical transmitter. Industrial standard bodies for optical communication project requirements of single-channel data rates as high as 100 Gbit/s around year 2020. LÄS MER

7. 25. Process integration issues for high-performance bipolar technology

   Författare :Tord E. Karlin; KTH; []
   Nyckelord :;

   Sammanfattning : The work in this thesis has been focused on processintegration issues for high-performance bipolar technologyincluding experimental work on self-aligned silicides,ion-implanted andin situdoped polysilicon emitters, strained silicongermanium for heterojunction bipolar transistors and physicalprocess and device simulation.Key issues for the self-aligned silicidation of small devicefeatures such as the influence of dopants, silicon morphologyand line width on titanium disilicide formation, phasetransformation and temperature stability, have been addressed. LÄS MER