Sökning: "bipolar transistor"

Visar resultat 6 - 10 av 51 avhandlingar innehållade orden bipolar transistor.

1. 6. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

   Författare :Martin Sandén; KTH; []
   Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

   Sammanfattning : .... LÄS MER

3. 7. Characterisation of bipolar transistors : parameter extraction and degradation dynamics

   Författare :Fredrik Ingvarson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bipolar junction transistor; reverse-bias stress; early effect; Gummel-Poon transistor model; recovery dynamics; parameter extraction; stress dynamics; direct extraction; current gain degradation; series resistance extraction;

   Sammanfattning : .... LÄS MER

4. 8. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

   Författare :Johan Pejnefors; KTH; []
   Nyckelord :chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

   Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER

5. 9. Bipolar Transistor Parameter Extraction, Modeling and Test Structure Design

   Författare :Fredrik Ingvarson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : In this thesis, techniques are presented for determining the model parameter values required by compact bipolar transistor models in circuit simulators. Specifically, extraction of the Early voltages and the transistor series resistances are treated in detail. Extraction of other compact model parameters is also covered. LÄS MER

7. 10. On Reliability of SiC Power Devices in Power Electronics

   Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER