Sökning: "WF6"

Visar resultat 6 - 9 av 9 avhandlingar innehållade ordet WF6.

  1. 6. Chemical vapor deposition of hard coatings : Development of W(C,N) coatings for cemented carbide and TiN deposition on a CoCrFeNi substrate

    Författare :Katalin Böőr; Mats Boman; Markku Leskelä; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : There is a constant need for cutting tool material development to be able to machine new materials and improve the metal cutting efficiency. Inserts of indexable cutting tools usually consist of WC-Co cemented carbide (cc) with μm thick layers of ceramic coatings. LÄS MER

  3. 7. Interaction of C60 with transition metals for thin film applications

    Författare :Lars Norin; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; C60; transition metals; fulleride; carbide; epitaxy; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Sammanfattning : The fullerene molecule C60 is known to undergo many different chemical reactions, including intercalation of alkali- and alkaline earth metals. Relatively little is still known about the reaction between transition metals and C60, and the objective of this thesis was therefore-to investigate the chemical interaction between C60 and some group IV-VI transition metals. LÄS MER

  4. 8. Heterogeneous Photolytic Synthesis of Nanoparticles

    Författare :Oscar Alm; Klaus Piglmayer; Uppsala universitet; []
    Nyckelord :Chemistry; LCVD; Nanotechnology; Metallocene; Magnetic; Photolysis; OES; tungsten oxide; gas sensing; Kemi;

    Sammanfattning : Nanoparticles of iron, cobalt and tungsten oxide were synthesised by photolytic laser assisted chemical vapour deposition (LCVD). An excimer laser (operating at 193 nm) was used as an excitation source. The LCVD process, was monitored in situ by optical emission spectroscopy (OES). LÄS MER

  5. 9. Thermally stable electrical contacts to 6H silicon carbide

    Författare :Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. LÄS MER