Sökning: "Si 111"

Visar resultat 1 - 5 av 51 avhandlingar innehållade orden Si 111.

  1. 1. Thin Mn silicide and germanide layers studied by photoemission and STM

    Författare :Joakim Hirvonen Grytzelius; Lars Johansson; Hanmin Zhang; Leif Johansson; Karlstads universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor surfaces; Si 111 ; Ge 111 ; manganese; Mn; silicides; germanides; atomic structure; electronic structure; magnetic properties; LEED; ARPES; XPS; core-level spectroscopy; STM; STS; XMCD; Physics; Fysik;

    Sammanfattning : The research presented in this thesis concerns experimental studies of thin manganese silicide and germanide layers, grown by solid phase epitaxy on the Si(111)7×7 and the Ge(111)c(2×8) surfaces, respectively. The atomic and electronic structures, as well as growth modes of the epitaxial Mn-Si and Mn-Ge layers, were investigated by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy (ARPES), core-level spectroscopy (CLS), and scanning tunneling microscopy and spectroscopy (STM and STS). LÄS MER

  3. 2. Scanning Tunneling Microscopy and Photoelectron Spectroscopy Studies of Si(111) and Ge(111) Surfaces : Clean and Modified by H or Sn Atoms

    Författare :Ivy Razado-Colambo; Roger Uhrberg; Göran Hansson; Maria-Carmen Asensio; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : The (111) surfaces of Si and Ge were studied by scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) that are complementary techniques used to obtain structural and electronic properties of surfaces. The (111) surfaces have been of great interest because of the complex reconstructions formed by annealing. LÄS MER

  4. 3. GaN/AlN Multiple Quantum Well Structures

    Författare :Xinju Liu; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Sammanfattning : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. LÄS MER

  5. 4. Growth and Characterization of Ti-Si-N Thin Films

    Författare :Axel Flink; Lars Hultman; Paul Mayrhofer; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Analytical transmission electron microscopy; Arc; Sputtering; Hard coatings; Multilayer Cutting inserts; analytisk transmissionselektronmikroskopi; ytbeläggningar; skärande; bearbetning; Ti-Si-N; arcförångning; sputtring; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : Utvecklingen inom materialforskningen går mot att framställa avancerade material vilka är skräddarsydda för olika tillämpningar. Detta har medfört att det blir allt mer populärt att belägga ytor med ett eller flera tunna lager med syfte att förbättra materialegenskaperna. LÄS MER

  7. 5. Growth and Characterization of Ti-Si-N Hard Coatings

    Författare :Axel Flink; Lars Hultman; Johanna Rosén; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ti-Si-N; physical vapor deposition; nitrides; density functional theory; transmission electron microscopy; nanocomposits; nanolaminates; solid solutions; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : Metastable (Ti,Si)N alloy and TiN/SiNx multilayer thin solid films as well as SiNx/TiN surfaces have been explored. Cubic Ti1-xSixN (0≤x≤0. LÄS MER