Sökning: "Si 111"
Visar resultat 21 - 25 av 51 avhandlingar innehållade orden Si 111.
21. Complex Excitations in Advanced Functional Materials
Sammanfattning : Understanding the fundamental electronic properties of materials is a key step to develop innovations in many fields of technology. For example, this has allowed to design molecular based devices like organic field effect transistors, organic solar cells and molecular switches. LÄS MER
22. Growth of 3C-SiC and Graphene for Solar Water-Splitting Application
Sammanfattning : Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H- or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si–C bilayers along the c-axis crystal direction. LÄS MER
23. Characterization of Surfaces Relevant to Nanotechnology
Sammanfattning : In this thesis investigations of the structure and dynamics of semiconductor surfaces relevant for the synthesis of nanostructures are presented. The studies were performed using Scanning Tunneling Microscopy (STM), Low Energy Electron Diffraction (LEED), and Spectroscopic PhotoEmission and Low Energy Electron Microcopy (SPELEEM). LÄS MER
24. Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods
Sammanfattning : In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. LÄS MER
25. Epitaxial Lateral Overgrowth of Indium Phosphide and Its Application in Heteroepitaxy
Sammanfattning : Monolithic integration of optoelectronics on silicon is adream. This thesis deals with the studies on the heteroepitaxyof indium phosphide on silicon substrate towards making thatdream come true. Materials growth issues, characterization anddefect identification are addressed. LÄS MER