Sökning: "Si 111"
Visar resultat 11 - 15 av 51 avhandlingar innehållade orden Si 111.
11. STM studies of epitaxial overlayers formed by metal deposition : Mo on MgO, Ni on SiC and Sn on Si
Sammanfattning : Magnetron sputtering and molecular beam epitaxy (MBE) have been used to deposit metallic overlayers on semiconducting and insulating materials such as Mo on MgO, Ni on SiC(0001) and Sn on Si(111). The layers have been annealed and characterized with scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), low energy electron diffration (LEED), refiecti ve high energy electron diffraction (RHEED) and atomic force microscopy (AFM). LÄS MER
12. Thin film growth and characterization of Ti-Si-C MAX-phases
Sammanfattning : This thesis describes the growth of Ti-Si-C MAX-phases on A12O3(0001) and MgO(111) substrates with the emphasis on epitaxial Ti3SiC2 thin films by means of DC magnetron sputtering. Ti3SiC2, Ti4SiC3 as well as the two intergrown structures Ti5Si2C3 and Ti7Si2C5 were grown using sputtering from three individual elemental targets of Ti, Si, and C, respectively. LÄS MER
13. MAX phase thin films : unique multifunctional ceramics with the elements Ti, Si, Ge, Sn, and C
Sammanfattning : Mn+1AXn phases are ternary carbides or nitrides (X) consisting of an early transition metal (M), and (A)- group element (group III-V). They combine ceramic and metallic properties with high oxidation and thermal shock resistance as well as low resistivity. LÄS MER
14. Atomic and Electronic Structures of Clean and Metal Adsorbed Si and Ge Surfaces : An Experimental and Theoretical Study
Sammanfattning : In this work, a selection of unresolved topics regarding the electronic and atomic structures of Si and Ge surfaces, both clean ones and those modified by metal adsorbates, are addressed. The results presented have been obtained using theoretical calculations and experimental techniques such as photoelectron spectroscopy (PES), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). LÄS MER
15. Electronic and atomic structure of metal induced reconstructionson Si(lll) and Ge(lll) surfaces studied by PES and STM
Sammanfattning : Deposition of metal atoms on semiconductors leads in many cases to reconstructed surfaces. The lack of symmetry in the direction normal to the surface allows for a large variety in the atomic arrangements of the surface reconstructions. In the case of silicon, more than 300 kinds of adsorbate-induced surface reconstructions have been found. LÄS MER
